TY - JOUR AU - HEMAIZIA, Z. AU - SENGOUGA, N. AU - MISSOUS, M. PY - 2014 TI - SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE JF - Courrier du Savoir; Vol. 10 (2010): Courrier du Savoir KW - N2 - Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate. UR - https://revues.univ-biskra.dz/index.php/cds/article/view/481