MEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODE

  • W. TERGHINI Laboratoire des Matériaux Métalliques et Semiconductrices, BP 145, Université de Biskra, Biskra 07000, Algérie
  • A. SAADOUNE Laboratoire des Matériaux Métalliques et Semiconductrices, BP 145, Université de Biskra, Biskra 07000, Algérie
  • L. DEHIMI Faculty of Science, University of Batna, 05000 Algeria
  • M.L. MEGHERBI Laboratoire des Matériaux Métalliques et Semiconductrices, BP 145, Université de Biskra, Biskra 07000, Algérie
  • S. ÖZÇELIKC Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey

Résumé

ABSTRACT
In this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in the
temperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on the
analysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( )
on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases,
ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very low
compared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant
(A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-Si
Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussian
distribution of the Schottky barrier heights (SBHs).
KEYWORDS: Schottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneity.

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Comment citer
TERGHINI, W. et al. MEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODE. Courrier du Savoir, [S.l.], v. 19, mars 2015. ISSN 1112-3338. Disponible à l'adresse : >http://revues.univ-biskra.dz/index.php/cds/article/view/1204>. Date de consultation : 18 sep. 2020