ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES

  • M.L. MEGHERBI Laboratory of Metallic and Semiconducting Materials,Mohammed Kheider University, 07000 Biskra, Algeria
  • L. DEHIMI Faculty of Science, ElhadjLakhdar University, 05000 Batna, Algeria
  • W. TERGHINI Laboratory of Metallic and Semiconducting Materials,Mohammed Kheider University, 07000 Biskra, Algeria
  • F. PEZZIMENTI DIMET-Faculty of engineering, Mediterranean University of Reggio Calabria, via graziella, 89122 Reggio Calabria, Italy
  • F.G. DELLA CORTE DIMET-Faculty of engineering, Mediterranean University of Reggio Calabria, via graziella, 89122 Reggio Calabria, Italy

Résumé

ABSTRACT
In this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigated
experimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performed
using proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and hole
minority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved and
well behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrier
lifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. We
achieved a good agreement between simulations and measured data. The measured and the simulated forward characteristics
indicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies of
about 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.
KEYWORDS: p-i-n diode, silicon carbide, silvaco, device simulation, lifetimes.

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Publiée
2015-03-17
Comment citer
MEGHERBI, M.L. et al. ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES. Courrier du Savoir, [S.l.], v. 19, mars 2015. ISSN 1112-3338. Disponible à l'adresse : >http://revues.univ-biskra.dz/index.php/cds/article/view/1207>. Date de consultation : 02 jui. 2020