SIMULATION OF THE PRE- AND POST-TRANSIT TIME OF FLIGHT METHODS IN AMORPHOUS SILICON-LIKE. N+-I-P+ -CELLS SIMULATION DES METHODES DE PRE- ET POST-TRANSIT DE LA TECHNIQUE TEMPS DE VOL POUR LES CELLULES N+-I-P+ EN MATERIAU DE TYPE a-Si:H.
In this paper, we study, by numerical simulation, the Transient Photocurrent (TPC) resulting from the application of the 'Time
Of Flight' (TOF) technique to a-Si:H n+-i-p+ cell by using a typical Density Of States (DOS) of amorphous silicon. The preand
post-transit methods, currently used to probe the energy distribution of localised states, are then applied to reconstruct the
proposed DOS from the simulated TPC. We demonstrate that the two methods of reconstruction are complementary and
provide an efficient tool of determining the transit time.
Plättner, J. Non- Cryst. Solids, 137-138 (1991) 427.
 J. Kočka, in: Electronic and Optoelectronic Materials
for the 21st Century, ed. J. M. Marshall, N. Kirov and
A. Vavrek (World Scientific, Singapore, 1993) p. 129.
 G. Seynhaeve, Time of Flight photocurrents in
Hydrogenated Amorphous Silicon, Ph.D. thesis, K.U.
 J. M. Marshall, in Proc. of the 10th International
School on Condensed Matter Physics, Varna, 1998,
ed. J.M. Marshall, N.Kirov, A.Vavrek And J.M. Maud
(World scientific, Singapore, 1999) p. 175.
 T. Tiedje and A. Rose, Solid State Commun. 37
 J. Orenstein and M. Kastner, Phys. Rev. Lett. 46
 W. Gao, Computer Modelling and Experimental
Characterisation of Amorphous Semiconductor Thin
Films and Devices, Ph.D. thesis, University of
Abertay, Dundee, UK,1995.
 C. Main, and R. Brüggemann, in: Electronic and
Optoelectronic Materials for the 21st Century, ed. J.
M. Marshall, N. Kirov and A. Vavrek (World
Scientific, Singapore, 1993) p. 270.