SIMULATION OF THE PRE- AND POST-TRANSIT TIME OF FLIGHT METHODS IN AMORPHOUS SILICON-LIKE. N+-I-P+ -CELLS SIMULATION DES METHODES DE PRE- ET POST-TRANSIT DE LA TECHNIQUE TEMPS DE VOL POUR LES CELLULES N+-I-P+ EN MATERIAU DE TYPE a-Si:H.

  • AM. MEFTAH Faculté des Sciences et des Sciences de l’Ingénieur Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider,
  • AF. MEFTAH Faculté des Sciences et des Sciences de l’Ingénieur Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider,
  • A. MERAZGA Faculté des Sciences et des Sciences de l’Ingénieur Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider,

Résumé

In this paper, we study, by numerical simulation, the Transient Photocurrent (TPC) resulting from the application of the 'Time
Of Flight' (TOF) technique to a-Si:H n+-i-p+ cell by using a typical Density Of States (DOS) of amorphous silicon. The preand
post-transit methods, currently used to probe the energy distribution of localised states, are then applied to reconstruct the
proposed DOS from the simulated TPC. We demonstrate that the two methods of reconstruction are complementary and
provide an efficient tool of determining the transit time.

Références

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Comment citer
MEFTAH, AM.; MEFTAH, AF.; MERAZGA, A.. SIMULATION OF THE PRE- AND POST-TRANSIT TIME OF FLIGHT METHODS IN AMORPHOUS SILICON-LIKE. N+-I-P+ -CELLS SIMULATION DES METHODES DE PRE- ET POST-TRANSIT DE LA TECHNIQUE TEMPS DE VOL POUR LES CELLULES N+-I-P+ EN MATERIAU DE TYPE a-Si:H.. Courrier du Savoir, [S.l.], v. 3, avr. 2014. ISSN 1112-3338. Disponible à l'adresse : >http://revues.univ-biskra.dz/index.php/cds/article/view/219>. Date de consultation : 15 jui. 2020
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