NUMERICAL SIMULATION OF ALGAAS/GAAS P-I-N QUANTUM WELL SOLAR CELL

  • SAMIRA LAZNEK Laboratory of semiconducting and metallic materials (LMSM), University of Biskra BP 145, Algeria
  • AFEK MEFTAH Laboratory of semiconducting and metallic materials (LMSM), University of Biskra BP 145, Algeria
  • AMJAD MEFTAH Laboratory of semiconducting and metallic materials (LMSM), University of Biskra BP 145, Algeria
  • NOURDDINE SENGOUGA Laboratory of semiconducting and metallic materials (LMSM), University of Biskra BP 145, Algeria

Résumé

This paper deals with a AlGaAs/GaAs p-i-n quantum well solar cell. The doped region are based on AlGaAs semiconductor while the intrinsic region "i" contain multi quantum well (MQW) system AlGaAs/GaAs. A numerical method is developed to determine the influence of insertion of MQW into the depletion region over the p-i(MQW)-n AlxGa1-xAs solar cells. Current–voltage (J-V) characteristics is generated for the AM1.5 solar spectrum. The effect of the Aluminum molar fraction x (AlxGa1-xAs), the number, the width, the depth of the wells and barriers in the "i" layer and the doping densities on the electrical outputs and the quantum efficiency of the solar cell are also presented. The optimized solar cell reached a conversion efficiency of 28.72 % with a short circuit current density of 36.9 mA/cm2 and an open circuit voltage of 0.97 V.

Publiée
2018-07-11
Comment citer
LAZNEK, SAMIRA et al. NUMERICAL SIMULATION OF ALGAAS/GAAS P-I-N QUANTUM WELL SOLAR CELL. Courrier du Savoir, [S.l.], n. 26, jui. 2018. ISSN 1112-3338. Disponible à l'adresse : >http://revues.univ-biskra.dz/index.php/cds/article/view/3946>. Date de consultation : 23 oct. 2018
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