NUMERICAL SIMULATION OF ALGAAS/GAAS P-I-N QUANTUM WELL SOLAR CELL
This paper deals with a AlGaAs/GaAs p-i-n quantum well solar cell. The doped region are based on AlGaAs semiconductor while the intrinsic region "i" contain multi quantum well (MQW) system AlGaAs/GaAs. A numerical method is developed to determine the influence of insertion of MQW into the depletion region over the p-i(MQW)-n AlxGa1-xAs solar cells. Current–voltage (J-V) characteristics is generated for the AM1.5 solar spectrum. The effect of the Aluminum molar fraction x (AlxGa1-xAs), the number, the width, the depth of the wells and barriers in the "i" layer and the doping densities on the electrical outputs and the quantum efficiency of the solar cell are also presented. The optimized solar cell reached a conversion efficiency of 28.72 % with a short circuit current density of 36.9 mA/cm2 and an open circuit voltage of 0.97 V.