SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors
(pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a
direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown
InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate.
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