SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE

  • Z. HEMAIZIA Laboratory of Metallic and Semiconducting Materials, Med Khider University
  • N. SENGOUGA Laboratory of Metallic and Semiconducting Materials, Med Khider University
  • M. MISSOUS School of Electronic and Electrical Engineering, Manchester University, Manchester, UK.

Résumé

Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors
(pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a
direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown
InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate.

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Comment citer
HEMAIZIA, Z.; SENGOUGA, N.; MISSOUS, M.. SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE. Courrier du Savoir, [S.l.], v. 10, mai 2014. ISSN 1112-3338. Disponible à l'adresse : >http://revues.univ-biskra.dz/index.php/cds/article/view/481>. Date de consultation : 11 jui. 2020
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