• Saâd Rahmane Laboratoire de Physique des Couches Minces et Applications, Université de Biskra, BP 145 RP, 07000 Biskra, Algérie
  • Mohamed Abdou Djouadi Institut des Matériaux Jean Rouxel IMN UMR 6502, Université de Nantes, 2 rue de La Houssinière BP 32229, 44322 Nantes Cedex France
  • Mohame Salah Aida Laboratoire des Couches minces et Interfaces, Université Mentouri, 25000 Constantine, Algérie


The effect of annealing temperature ranged from 200 to 600 °C on the structural, optical and electrical properties of aluminum
doped zinc oxide (ZnO:Al) films was reported. The thin films were deposited on glass and silicon substrates by rf magnetron
sputtering method using ZnO target (diameter 7,5 cm) mixed with 2 wt.% Al2O3. It has been found that the crystal structure of
ZnO:Al films is hexagonal with c-axis preferential orientation. With an increase in the annealing temperature the intrinsic
compressive stress was found to decrease, and near stress-free film was obtained after annealing at 600 °C. A resistivity of
cm and an average transmittance above 90 % in visible range were obtained for films prepared at room




[1] K. L. Chopra, S. Major, D. K. Pandya, Thin Solid
Films 102 (1983) 1.
[2] J. J. Aranovich, D. Golmaya, A. L. Fohrenbruck, R. H.
Bube, J. Appl. Phys. 51 (1980) 4260.
[3] M. L. Olvera, A. Maldonado, R. Asomoza, M.
Komagai, M. Azomosa, Thin Solid Films 229 (1993)
[4] C. S. Chen, C. T. Kuo, T. B. Wu, I. N. Lin, J. Appl.
Phys. 36 (1997) 1169.
[5] A. Bougrine, A. El Hichou, M. Addou, J. Ebothé, A.
Kachouane, M. Troyan, Materials Chem. Phys. 80
(2003) 438.
[6] Z. C. Jin, J. Hamberg, C. G. Grangvist, J. Appl. Phys.
64 (1988) 5117.
[7] T. Minami, T. Yamamoto, T. Miyata, Thin Solid Films
366 (2000) 63.
[8] J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, L. Wang, J.
Yuan, and B. H. Zhao, J. Appl. Phys. 100, 073714
[9] Y. Natsume, H. Sakata, T. Hirayama, Phys. Stat. Solid.
(a) 148 (1995) 485.
[10] V. Cracium, J. Elders, J. G. E. Gardeniev, I. W. Boyd,
Appl. Phys. Lett. 65 (1994) 2963.
[11] S. B. Majumder, M. Jain, P. S. Dobal, R. S. Katiyar,
Mater. Sci. Eng. B 103 (2003) 16.
[12] R. Ayouchi, D. Leinen, F. Martin, M. Gabas, E.
Delchiele, J. R. Ramos-Barrado, Thin Solid Films 426
(2003) 68.
[13] S. Rahmane, M. S. Aida, A. Chala, H. B. Temam and
M. A. Djouadi, plasma Process. Plym. 2007, 4, s356.
[14] B. Abdallah, A. Chala, P.-Y. Jouan, M.P. Besland,
M.A. Djouadi, Thin Solid Films 515 (2007) 7106.
[15] J. Tauc, Amorphous and Liquid Semiconductors,
Plenum, London, 1974.
[16] E.A. David, N.F. Mott, Philos. Mag. 22 (1970) 903.
[17] F. Urbach, Phys. Rev. 92 (1953) 1324.
[18] J. Hinze and K. Ellmer, J. Appl. Phys.,vol.88, N0.5,
(2000) 2443.
[19] E. Burstein, Phys. Rev. 93, 632 (1954).
[20] T. S. Moss, Proceedings of the physical Society
London B76 (1954) 775.
[21] Lee GH, Yamamoto Y, Kourogi M, et al. Thin Solid
Films 386 (2001)117.
[22] Y. Natsume, H. Sakata, Thin Solid Films 372 (2000)
[23] Y. Natsume, H. Sakata, T. Hirayama, Phys. Stat. Solid.
(a) 148 (1995) 485.
Comment citer
RAHMANE, Saâd; ABDOU DJOUADI, Mohamed; SALAH AIDA, Mohame. THE EFFECT OF ANNEALING ON THE PROPERTIES OF ZNO:AL FILMS GROWN BY RF MAGNETRON SPUTTERING. Courrier du Savoir, [S.l.], v. 18, juin 2014. ISSN 1112-3338. Disponible à l'adresse : >>. Date de consultation : 02 jui. 2020