• Saâd Rahmane Laboratoire de Physique des Couches Minces et Applications, Université de Biskra, BP 145 RP, 07000 Biskra, Algérie
  • Mohamed Abdou Djouadi Institut des Matériaux Jean Rouxel IMN UMR 6502, Université de Nantes, 2 rue de La Houssinière BP 32229, 44322 Nantes Cedex France
  • Mohame Salah Aida Laboratoire des Couches minces et Interfaces, Université Mentouri, 25000 Constantine, Algérie


The effect of annealing temperature ranged from 200 to 600 °C on the structural, optical and electrical properties of aluminum
doped zinc oxide (ZnO:Al) films was reported. The thin films were deposited on glass and silicon substrates by rf magnetron
sputtering method using ZnO target (diameter 7,5 cm) mixed with 2 wt.% Al2O3. It has been found that the crystal structure of
ZnO:Al films is hexagonal with c-axis preferential orientation. With an increase in the annealing temperature the intrinsic
compressive stress was found to decrease, and near stress-free film was obtained after annealing at 600 °C. A resistivity of
cm and an average transmittance above 90 % in visible range were obtained for films prepared at room




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Comment citer
RAHMANE, Saâd; ABDOU DJOUADI, Mohamed; SALAH AIDA, Mohame. THE EFFECT OF ANNEALING ON THE PROPERTIES OF ZNO:AL FILMS GROWN BY RF MAGNETRON SPUTTERING. Courrier du Savoir, [S.l.], v. 18, juin 2014. ISSN 1112-3338. Disponible à l'adresse : >>. Date de consultation : 18 mai 2021